Characterization of GaSb thin films from tailor-made single source precursors

Seemayer, Andreas GND; Hommes, Alexander; Hümann, Sascha GND; Wandelt, Klaus GND; Schulz, Stephan GND

We investigated the growth and the surface properties of GaSb on Si(001) substrate by using a tailor-made fully-alkyl-substituted heterocyclic single-source precursor. The
precursor properties during the evaporation process where monitored by RGA. The initial film growth was monitored by AES. Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS. The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.

Cite

Citation style:
Seemayer, A., Hommes, A., Hümann, S., Wandelt, K., Schulz, S., 2020. Characterization of GaSb thin films from tailor-made single source precursors. https://doi.org/10.1016/j.jcrysgro.2008.07.114
Could not load citation form.

Rights

Export