• Article / Chapter
  • Characterization of GaSb thin films from tailor-made single source precursors

Characterization of GaSb thin films from tailor-made single source precursors

We investigated the growth and the surface properties of GaSb on Si(001) substrate by using a tailor-made fully-alkyl-substituted heterocyclic single-source precursor. The
precursor properties during the evaporation process where monitored by RGA. The initial film growth was monitored by AES. Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS. The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.

Preview

Category

Date Issued:
27.10.2020
URN:
urn:nbn:de:hbz:464-20201027-082457-6
DOI:
10.1016/j.jcrysgro.2008.07.114
Language:
English
Type of Resource:
Text
Keywords:
A1. Surfaces A3. Low press. metalorganic vapor-phase epitaxy B1. Antimonides B2. Semiconducting III–V materials
Collection:
E-Publications
Subject categories of the Deutsche Nationalbibliografie:
540 Chemistry & allied sciences
Hosting institution:
Faculty of Chemistry, Anorganische Chemie
Info on primary publication:
This is the "Authors Accepted Manuscript" of an article published in: Journal of Crystal Growth, Volume 310, Issue 23, 2008, Pages 4831-4834. Available online 7 August 2008.
The final version may be found at: https://doi.org/10.1016/j.jcrysgro.2008.07.114
version identification:
Authors Accepted Manuscript.

Cite

Citation style:
Could not load citation form.

Rights

Use and reproduction:
This work may be used under a
CC BY-NC-ND 4.0 LogoCreative Commons Attribution - NonCommercial - NoDerivatives 4.0 License (CC BY-NC-ND 4.0)
.