Characterization of GaSb thin films from tailor-made single source precursors
We investigated the growth and the surface properties of GaSb on Si(001) substrate by using a tailor-made fully-alkyl-substituted heterocyclic single-source precursor. The
precursor properties during the evaporation process where monitored by RGA. The initial film growth was monitored by AES. Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS. The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.
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