@Article{duepublico_mods_00073139,
  author = 	{Seemayer, Andreas
		and Hommes, Alexander
		and H{\"u}mann, Sascha
		and Wandelt, Klaus
		and Schulz, Stephan},
  title = 	{Characterization of GaSb thin films from tailor-made single
source precursors},
  year = 	{2020},
  month = 	{Oct},
  day = 	{27},
  keywords = 	{A1. Surfaces A3. Low press. metalorganic vapor-phase epitaxy B1. Antimonides B2. Semiconducting III--V materials},
  abstract = 	{We investigated the growth and the surface properties of GaSb on Si(001) substrate by using a tailor-made fully-alkyl-substituted heterocyclic single-source precursor. The precursor properties during the evaporation process where monitored by RGA. The initial film growth was monitored by AES. Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS. The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.},
  note = 	{<div>This is the <strong>"Authors Accepted Manuscript"</strong> of an article published in: Journal of Crystal Growth, Volume 310, Issue 23, 2008, Pages 4831-4834. Available online 7 August 2008.</div>

<div>The final version may be found at: <a href="https://doi.org/10.1016/j.jcrysgro.2008.07.114">https://doi.org/10.1016/j.jcrysgro.2008.07.114</a></div>},
  note = 	{Authors Accepted Manuscript.},
  doi = 	{10.1016/j.jcrysgro.2008.07.114},
  url = 	{https://duepublico2.uni-due.de/receive/duepublico_mods_00073139},
  url = 	{https://doi.org/10.1016/j.jcrysgro.2008.07.114},
  file = 	{:https://duepublico2.uni-due.de/servlets/MCRFileNodeServlet/duepublico_derivate_00072949/Accepted_Manuscript_JCrystGrowth_2008_310_4831.pdf:PDF},
  language = 	{en}
}