PT Unknown
AU Seemayer, A
   Hommes, A
   Hümann, S
   Wandelt, K
   Schulz, S
TI Characterization of GaSb thin films from tailor-made single
source precursors
PD 10
PY 2020
DI 10.1016/j.jcrysgro.2008.07.114
LA en
DE A1. Surfaces A3. Low press. metalorganic vapor-phase epitaxy B1. Antimonides B2. Semiconducting III–V materials
AB We investigated the growth and the surface properties of GaSb on Si(001) substrate by using a tailor-made fully-alkyl-substituted heterocyclic single-source precursor. The precursor properties during the evaporation process where monitored by RGA. The initial film growth was monitored by AES. Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS. The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.
ER