000K  utf8
1100  2020$c2020-10-27
1500  eng
2050  urn:nbn:de:hbz:464-20201027-082457-6
2051  10.1016/j.jcrysgro.2008.07.114
3000  Seemayer, Andreas
3010  Hommes, Alexander
3010  Hümann, Sascha
3010  Schulz, Stephan
3010  Wandelt, Klaus
4000  Characterization of GaSb thin films from tailor-made single
source precursors  [Seemayer, Andreas]
4209  We investigated the growth and the surface properties of GaSb on Si(001) substrate by using a tailor-made fully-alkyl-substituted heterocyclic single-source precursor. The precursor properties during the evaporation process where monitored by RGA. The initial film growth was monitored by AES. Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS. The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.
4950  https://doi.org/10.1016/j.jcrysgro.2008.07.114$xR$3Volltext$534
4950  https://nbn-resolving.org/urn:nbn:de:hbz:464-20201027-082457-6$xR$3Volltext$534
4961  https://duepublico2.uni-due.de/receive/duepublico_mods_00073139
5051  540
5550  A1. Surfaces A3. Low press. metalorganic vapor-phase epitaxy B1. Antimonides B2. Semiconducting III–V materials