Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as Single Source Precursor

Bendt, Georg GND; Gassa, Sanae; Rieger, Felix GND; Jooß, Christian GND; Schulz, Stephan GND

Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230 °C, which is approximately 100 °C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.

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Bendt, G., Gassa, S., Rieger, F., Jooß, C., Schulz, S., 2020. Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as Single Source Precursor. https://doi.org/10.1016/j.jcrysgro.2018.03.021
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