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Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as Single Source Precursor

Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230 °C, which is approximately 100 °C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.

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Date Issued:
15.12.2020
URN:
urn:nbn:de:hbz:464-20201215-150815-8
DOI:
10.1016/j.jcrysgro.2018.03.021
Language:
English
Type of Resource:
Text
Keywords:
A3. Metalorganic chemical vapor deposition; B1. Bismuth compounds; B1. Tellurides; B1. Nanomaterials; B2. Semiconducting materials
Collection:
E-Publications
Subject categories of the Deutsche Nationalbibliografie:
540 Chemistry & allied sciences
Subject categories of the Deutsche Nationalbibliografie:
530 Physics
Hosting institution:
Faculty of Chemistry, Anorganische Chemie
Hosting institution:
Scientific institutes, Center for Nanointegration Duisburg-Essen (CENIDE)
Info on primary publication:

This is the "Authors Accepted Manuscript" of an article published in: Journal of Crystal Growth 2018, Volume 490, Pages 77-83. Available online 14 March 2018.

The final version may be found at: https://doi.org/10.1016/j.jcrysgro.2018.03.021
version identification:
Authors Accepted Manuscript.

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