000K  utf8
1100  2020$c2020-12-15
1500  eng
2050  urn:nbn:de:hbz:464-20201215-150815-8
2051  10.1016/j.jcrysgro.2018.03.021
3000  Bendt, Georg
3010  Gassa, Sanae
3010  Jooß, Christian
3010  Rieger, Felix
3010  Schulz, Stephan
4000  Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as Single Source Precursor  [Bendt, Georg]
4209  Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230 °C, which is approximately 100 °C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.
4950  https://doi.org/10.1016/j.jcrysgro.2018.03.021$xR$3Volltext$534
4950  https://nbn-resolving.org/urn:nbn:de:hbz:464-20201215-150815-8$xR$3Volltext$534
4961  https://duepublico2.uni-due.de/receive/duepublico_mods_00073577
5051  530
5051  540
5550  A3. Metalorganic chemical vapor deposition
5550  B1. Bismuth compounds
5550  B1. Nanomaterials
5550  B1. Tellurides
5550  B2. Semiconducting materials