PT Unknown
AU Bendt, G
   Gassa, S
   Rieger, F
   Jooß, C
   Schulz, S
TI Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as Single Source Precursor
PD 12
PY 2020
DI 10.1016/j.jcrysgro.2018.03.021
LA en
DE A3. Metalorganic chemical vapor deposition; B1. Bismuth compounds; B1. Tellurides; B1. Nanomaterials; B2. Semiconducting materials
AB Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230 °C, which is approximately 100 °C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.
ER