Defect spectroscopy on the dielectric material aluminum oxide

A method for defect characterization is presented that allows to measure the activation energy, capture cross-section, and defect density in dielectric materials. This is exemplarily performed on aluminum oxide thin films deposited on hydrogen-terminated diamond. During the measurement, samples were illuminated using a 405 nm laser, charging the defects while simultaneously measuring the surface conductivity of the diamond at different temperatures. By applying the standard boxcar evaluation known from deep-level transient spectroscopy, we found five different defect levels in Al₂O₃. One can be identified as substitutional silicon in aluminum oxide, while the others are most likely connected to either aluminum interstitials or carbon and nitrogen impurities.

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Date Issued:
27.07.2020
URN:
urn:nbn:de:hbz:465-20231006-113831-9
DOI:
10.1038/s41598-020-69240-3
Language:
English
Type of Resource:
Text
Collection:
E-Publications
Subject categories of the Deutsche Nationalbibliografie:
530 Physics
Hosting institution:
Faculty of Physics
Hosting institution:
Scientific institutes, Center for Nanointegration Duisburg-Essen (CENIDE)
funding:

This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) – ProjectID 278162697 – SFB 1242.

The publication of this article was supported by the Publication Fund of the University of Duisburg-Essen.

Info on primary publication:

Oing, D., Geller, M., Stahl, L. et al. Defect spectroscopy on the dielectric material aluminum oxide. Sci Rep 10, 12533 (2020). https://doi.org/10.1038/s41598-020-69240-3

Published 27 July 2020

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Version of Record / Verlagsversion

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