Van der Waals epitaxial MOCVD-growth of (BixSb1-x)2Te3 (0<x<1) films

Bendt, Georg GND; Sonntag, Jens ORCID; Lorke, Axel GND; Assenmacher, Wilfried ORCID; Hagemann, Ulrich GND; Schulz, Stephan GND

Epitaxial (BixSb1−x)2Te3 films with (0 < x < 1) were grown by the metal-organic chemical vapour deposition (MOCVD) process at 400 °C using the tailor-made precursors Et2Te2, i-Pr3Sb and Et3Bi. The films grown on Al2O3(0001) substrates show a very smooth surface morphology as shown by a scanning electron microscope (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM), while those grown on Si(100) are rather polycrystalline. The chemical composition of the crystalline films (x-ray powder diffraction (XRD)) was investigated by energy-dispersive x-ray (EDX) and x-ray photoelectron spectroscopy (XPS), and the in-plane transport properties were measured, and a strong dependency from the bismuth content was found, which allows the tuning of the carrier concentration and mobility in a wide range.

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Bendt, G., Sonntag, J., Lorke, A., Assenmacher, W., Hagemann, U., Schulz, S., 2020. Van der Waals epitaxial MOCVD-growth of (BixSb1-x)2Te3 (0<x<1) films. https://doi.org/10.1088/0268-1242/30/8/085021
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