Sequential Bi-C bond activation reactions of BiEt₃ via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr₂C₆H₃)]₂; E = Al, Ga, In}.

Two of the Bi-C bonds of BiEt3 are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; M = Al, Ga, In}. The first Bi-C bond activation leads to the formation of insertion complexes, [RMEt(BiEt2)] (M = Al 1; Ga 2; In 3), whereas the consecutive second activation proceeds through a reductive elimination of RMEt2 (M = Al 4, Ga 5), elemental Bi and BiEt3.


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