Deposition of topological insulator Sb2Te3 films by an MOCVD process

Bendt, Georg GND; Zastrow, Sebastian; Nielsch, Kornelius GND; Mandal, Partha Sarathi ORCID; Sánchez-Barriga, Jaime GND; Rader, Oliver GND; Schulz, Stephan GND

Layered Sb2Te3 films were grown by a MOCVD process on Al2O3(0001) substrates at 400 °C by use of i-Pr3Sb and Et2Te2 and characterized by SEM, AFM, XRD, EDX and Auger spectroscopy. The electrical sheet resistivity was measured in the range of 4 to 400 K, showing a monotonic increase with increasing temperature. The valence band structure probed by angle-resolved photoemission shows the detailed dispersions of the bulk valence band and the topological surface state of a quality no less than for optimized bulk single crystals. The surface state dispersion gives a Dirac point roughly 30 meV above the Fermi level leading to hole doping and the presence of bulk valence states at the Fermi energy.


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Bendt, G., Zastrow, S., Nielsch, K., Mandal, P.S., Sánchez-Barriga, J., Rader, O., Schulz, S., 2014. Deposition of topological insulator Sb2Te3 films by an MOCVD process.
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