Low-Temperature MOCVD Deposition of Crystalline Ga2O3 Nanowires using t-Bu3Ga

Schulz, Stephan GND; Bendt, Georg GND; Assenmacher, Wilfried ORCID; Sager, Daniel GND; Bacher, Gerd GND

Crystalline Ga2O3 nanowires are synthesized via an Au‐catalyzed, as well as a self‐catalyzed, growth by a low‐temperature metal‐organic (MO)CVD process using tBu3Ga as a novel Ga source. Morphology, elemental composition, and crystallinity of the resulting nanowires are analyzed by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), energy dispersive X‐ray spectroscopy (EDX), X‐ray diffraction (XRD), and selected area electron diffraction (SAED). Photoluminescence (PL) spectra of the Ga2O3 nanowires show efficient defect‐luminescence in the visible and UV ranges with blue and green emission peaks at 430 nm and 512 nm, respectively, at room temperature.

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Schulz, S., Bendt, G., Assenmacher, W., Sager, D., Bacher, G., 2020. Low-Temperature MOCVD Deposition of Crystalline Ga2O3 Nanowires using t-Bu3Ga. https://doi.org/10.1002/cvde.201307060
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