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Single Source Precursor-Based Deposition of Sb2Te3 Films by MOCVD-Process
The low‐temperature metal‐organic (MO)CVD of Sb2Te3 films is achieved by the use of the single‐source precursor (Et2Sb)2Te, 1. The role of the substrate temperature on the deposition rate and the composition of the resulting film is described. The resulting Sb2Te3 films are characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X‐ray (EDX) and Auger spectroscopies. Moreover, the Seebeck coefficient of the Sb2Te3 film deposited at 200 °C is determined, and the value of 160 µV K−1 demonstrates the high quality and low carrier density of the film.
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