Structural, optical, and mechanical properties of silicon nitride films deposited by inductively coupled plasma enhanced chemical vapor deposition

LSF
61910
Affiliation
Optoelectronics, University of Duisburg-Essen, Lotharstraße 55, 47057 Duisburg, Germany
Abacıoğlu, Ezgi;
LSF
54487
Affiliation
Optoelectronics, University of Duisburg-Essen, Lotharstraße 55, 47057 Duisburg, Germany
Fernández Estévez, José Luis;
GND
103673627X
ORCID
0000-0003-1036-2120
LSF
2648
Affiliation
Optoelectronics, University of Duisburg-Essen, Lotharstraße 55, 47057 Duisburg, Germany
Stöhr, Andreas

In this study, a low-temperature and low-pressure SiNx film deposition on InP substrates is investigated using inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) technology. We discuss herein the results of an extensive characterization of structural and mechanical properties of the ICPECVD-SiNx films.

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