Bismuth Amides as promising ALD Precursors for Bi2Te3 Films

The thermal properties of five homoleptic bismuth amides of the general type (R1R2N)3Bi (R1, R2 = Me 1, R1, R2 = Et 2, R1, R2 = n-Pr 3, R1 = Me, R2 = Et 4, R1 = n-Bu, R2 = Et 5) and the cyclo-dibismadiazane [(Me3Si)2NBi-μ-NSiMe3]26 were studied by DSC and TGA/DTA (1, 6) and their reactions with (Et3Si)2Te were investigated by in situ NMR spectroscopy. Based on these results, the potential application of 1, 4 and 6 to serve as ALD precursors for the deposition of Bi2Te3 films in reactions with (Et3Si)2Te were investigated. The resulting films were characterized by XRD, EDX, AFM and SEM and the crucial role of the substrate material and substrate temperature on the film growth rate and the morphology and chemical composition of the Bi2Te3 films was determined.

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Einordnung

Datum der Veröffentlichung:
10.12.2020
URN:
urn:nbn:de:hbz:464-20201210-165727-7
DOI:
10.1016/j.jcrysgro.2017.04.019
Sprache:
Englisch
Ressourcentyp:
Text
Schlagwörter:
A3. Atomic layer epitaxy; B1. Bismuth compounds; B1. Tellurites; B2. Semiconducting materials
Kollektion:
E-Publikationen
Sachgruppen der Deutschen Nationalbibliographie:
540 Chemie
Einrichtung:
Fakultät für Chemie, Anorganische Chemie
Einrichtung:
Forschungszentren, Center for Nanointegration Duisburg-Essen (CENIDE)
Informationen zur Erstveröffentlichung:

This is the "Authors Accepted Manuscript" of an article published in: Journal of Crystal Growth 2017, Volume 470, Pages 128-134. Available online19 April 2017.

The final version may be found at: https://doi.org/10.1016/j.jcrysgro.2017.04.019
Versionskennzeichen:
Authors Accepted Manuscript.

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