Synthesis of binary Sb2E3 (E = S, Se) and ternary Sb2(S,Se)3 Nanowires using tailor-made Single-Source-Precursors

Thermal decomposition of four single‐source precursors of the type (Et2Sb)2E and Et3SbE (E = S, Se) at 170 °C in the presence of suitable capping agents yielded binary Sb2S3 and Sb2Se3 nanowires. In addition, simultaneous decomposition of (Et2Sb)2S and(Et2Sb)2Se gave the ternary phase Sb2(S,Se)3 with almost equal S and Se concentrations. The materials were characterized by XRD, REM, EDX, ED and HRTEM.

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