Sb₂Te₃ has recently been an object of intensive research since its promising applicability in thermoelectric, in phase-change memory devices and as a topological insulator. In this work, we report highly textured Sb₂Te₃ thin films, grown by atomic layer deposition on Si/SiO₂ wafers based on the reaction of SbCl₃ and (Et₃Si)₂Te. The low deposition temperature at 80 °C allows the pre-patterning of the Sb₂Te₃ by standard lithography processes. A platform to characterize the Seebeck coefficient S, the electrical conductivity σ as well as the Hall coefficient R_H on the same film has been developed. Comparing all temperature-dependent transport properties, three different conductive regions in the temperature range of 50–400 K are found. Room temperature values of S = 146 × 10^–6 VK⁻¹, σ = 10⁴ Sm⁻¹ and mobility µ = 270.5 × 10⁻⁴ m² V⁻¹ s⁻¹ are determined. The low carrier concentration in the range of n = 2.4 × 10¹⁸ cm⁻³ at 300 K quantifies the low defect content of the Sb₂Te₃ thin films.