Thermoelectric transport- and Hall measurements of low defect Sb2Te3 thin films grown by Atomic Layer Deposition

Zastrow, Sebastian; Gooth, Johannes GND; Boehnert, Tim; Heiderich, Sonja; Toellner, William; Heimann, Stefan GND; Schulz, Stephan GND; Nielsch, Kornelius GND

Sb2Te3 has recently been an object of intensive research since its promising applicability in thermoelectric, in phase-change memory devices and as a topological insulator. In this work, we report highly textured Sb2Te3 thin films, grown by atomic layer deposition on Si/SiO2 wafers based on the reaction of SbCl3 and (Et3Si)2Te. The low deposition temperature at 80 °C allows the pre-patterning of the Sb2Te3 by standard lithography processes. A platform to characterize the Seebeck coefficient S, the electrical conductivity σ as well as the Hall coefficient RH on the same film has been developed. Comparing all temperature-dependent transport properties, three different conductive regions in the temperature range of 50–400 K are found. Room temperature values of S = 146 × 10–6 VK−1, σ = 104 Sm−1 and mobility µ = 270.5 × 10−4 m2 V−1 s−1 are determined. The low carrier concentration in the range of n = 2.4 × 1018 cm−3 at 300 K quantifies the low defect content of the Sb2Te3 thin films.

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Zastrow, S., Gooth, J., Boehnert, T., Heiderich, S., Toellner, W., Heimann, S., Schulz, S., Nielsch, K., 2020. Thermoelectric transport- and Hall measurements of low defect Sb2Te3 thin films grown by Atomic Layer Deposition. https://doi.org/10.1088/0268-1242/28/3/035010
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