Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD process

Crystalline GaSb films were deposited using tailor-made single source precursors [t-
BuB2BGaSbEtB2B]2 B in a specifically designed MOCVD reactor under HV conditions at low temperatures. In addition, tetraethyldistibine Sb2Et4 has been successfully used as precursor for the deposition of crystalline antimony films at low temperatures.


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