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Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD process

Crystalline GaSb films were deposited using tailor-made single source precursors [t-
BuB2BGaSbEtB2B]2 B in a specifically designed MOCVD reactor under HV conditions at low temperatures. In addition, tetraethyldistibine Sb2Et4 has been successfully used as precursor for the deposition of crystalline antimony films at low temperatures.

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Date Issued:
27.10.2020
URN:
urn:nbn:de:hbz:464-20201027-084134-2
DOI:
10.1016/j.jcrysgro.2008.07.038
Language:
English
Type of Resource:
Text
Keywords:
A1. single source precursor, A3. MOCVD, B1. antimony, B1. gallium antimonide
Collection:
E-Publications
Subject categories of the Deutsche Nationalbibliografie:
540 Chemistry & allied sciences
Hosting institution:
Faculty of Chemistry, Anorganische Chemie
Info on primary publication:
This is the "Authors Accepted Manuscript" of an article published in: Journal of Crystal Growth, Volume 310, Issue 23, 2008, Pages 4715-4719. Available online 18 July 2008.
The final version may be found at: https://doi.org/10.1016/j.jcrysgro.2008.07.038
version identification:
Authors Accepted Manuscript.

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