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  • Rigorose Modellbeschreibung für InP basierte Heterostruktur-Bipolartransistoren

Rigorose Modellbeschreibung für InP basierte Heterostruktur-Bipolartransistoren

For circuit simulation and device optimisation it is necessary to have one consistent model which describes not only the DC-behaviour of the device correcty but also the the small-signal and noise behaviour. This work presents a rigorous modell-description of an InP based heterojunction bipolartransitor taking into account material specific effects for all bias conditions.

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Translated title:
Rigorous model description for InP-based heterojunction bipolartransistors (English)
Thesis advisor:
LSF
3910
Prof. Dr. rer. nat. Tegude, Franz-Josef
Date Created:
29.07.2005
Date of doctoral degree:
29.07.2005
URN:
urn:nbn:de:hbz:464-duett-03282006-1147351
PURL:
http://purl.oclc.org/NET/duett-03282006-114735
Language:
German
Type of Resource:
Text
Keywords:
emitter-area scaling; temperature dependent; bias dependent; model; HBT; rf-noise; InP; equivalent circuit
Collection:
E-Dissertations
Dewey Decimal Classification:
620 Engineering
Subject categories of the Deutsche Nationalbibliografie:
620 Engineering & allied operations
Hosting institution:
Faculty of Engineering, Engineering and Information Technology

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