Rigorose Modellbeschreibung für InP basierte Heterostruktur-Bipolartransistoren

For circuit simulation and device optimisation it is necessary to have one consistent model which describes not only the DC-behaviour of the device correcty but also the the small-signal and noise behaviour. This work presents a rigorous modell-description of an InP based heterojunction bipolartransitor taking into account material specific effects for all bias conditions.


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